RC-IGBT WITH FREEWHEELING SIC DIODE
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United States of America Patent
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Issued Date -
Apr 23, 2015
app pub date -
Oct 21, 2014
filing date -
Oct 22, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor module as disclosed can include a reverse conducting transistor, with a gate, a collector and an emitter providing a reverse conducting diode between collector and emitter; at least one freewheeling diode connected antiparallel to the transistor having a forward voltage drop higher than the reverse conducting diode during a static state; and a controller to turn the transistor on and off. The controller can apply a pulse to the transistor gate before the reverse conducting diode enters a blocking state, such that when the reverse conducting diode enters the blocking state, a forward voltage drop of the reverse conducting diode is higher than of the at least one freewheeling diode.
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