PLANAR AVALANCHE PHOTODIODE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 30, 2015
app pub date -
May 17, 2013
filing date -
May 17, 2012
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
An avalanche photodiode includes a first semiconductor layer, a multiplication layer, a charge control layer, a second semiconductor layer, a graded absorption layer, a blocking layer and a second contact layer. The multiplication layer is located between the charge control layer and the first semiconductor layer. The charge control layer is located between the second semiconductor layer and the multiplication layer. The second semiconductor layer is located between the charge control later and the graded absorption layer. The graded absorption layer is located between the second semiconductor layer and the blocking layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully