Lateral Diffused Metal Oxide Semiconductor
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United States of America Patent
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Issued Date -
Apr 30, 2015
app pub date -
Oct 30, 2013
filing date -
Oct 30, 2013
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Abandoned
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Abstract
A lateral diffused N-type metal oxide semiconductor device includes a semiconductor substrate, an epi-layer on the semiconductor substrate, a patterned isolation layer on the epi-layer, a N-type double diffused drain (NDDD) region in a first active region of the patterned isolation layer, a N+ heavily doped drain region disposed in the NDDD region, a P-body diffused region disposed in a second active region of the patterned isolation layer, a neighboring pair of a N+ heavily doped source region and a P+ heavily doped source region disposed in the P-body diffused region, a first gate structure disposed above a channel region of the patterned isolation layer and a second gate structure disposed above the second active region. The second gate structure and the first gate structure are spaced at a predetermined distance.
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