Nonvolatile semiconductor memory apparatus

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United States of America Patent

PATENT NO 9502116
APP PUB NO 20150117102A1
SERIAL NO

14581420

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Abstract

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According to one embodiment, a nonvolatile semiconductor memory apparatus includes a memory cell array, a row decoder, a controller. The memory cell array includes a plurality of memory strings. The memory strings include a first select transistor and a second select transistor, and are connected to each of a plurality of bit lines. The row decoder applies a voltage to the first and second select transistors. The controller detects a defect of the bit lines based on data read from the memory cells.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagadomi, Yasushi Yokohama, JP 39 677
Tokiwa, Naoya Fujisawa, JP 80 1106

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