Methods of forming semiconductor device structures, and methods of forming capacitor structures
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United States of America Patent
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Oct 2, 2018
Grant Date -
Apr 30, 2015
app pub date -
Oct 29, 2013
filing date -
Oct 29, 2013
priority date (Note) -
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Abstract
A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.
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