Method of fabricating thin, freestanding, single crystal silicon sheet

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United States of America Patent

PATENT NO 9373503
APP PUB NO 20150118831A1
SERIAL NO

14503801

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Abstract

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A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered structure includes a Si device layer and a SiGe sacrificial layer, and removing the SiGe sacrificial layer with a spin etch process, where the Si device layer is released from the layered structure.

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Patent Owner(s)

  • THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iancu, Andrei T Stanford, US 4 5
Prinz, Friedrich B Woodside, US 94 1262

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