RECESSED CHANNEL ACCESS TRANSISTOR DEVICE AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
May 7, 2015
app pub date -
Nov 4, 2013
filing date -
Nov 4, 2013
priority date (Note) -
Abandoned
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Abstract
A recessed channel access transistor device is provided. A semiconductor substrate having thereon a trench is provided. The trench extends from a main surface of the semiconductor substrate to a predetermined depth. A buried gate electrode is disposed at a lower portion of the trench. A gate oxide layer is formed between the buried gate electrode and the semiconductor substrate. A drain doping region on a first side (cell side) of the trench in the semiconductor substrate and a source doping region on a second side (digit side) of the trench are formed. The source doping region has a junction depth that is deeper than that of the drain doping region. An L-shaped channel is defined along a sidewall surface on the first side and along a bottom surface of the trench between the drain doping region and the source doping region.
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