Semiconductor device and method of manufacturing the semiconductor device
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United States of America Patent
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Feb 14, 2017
Grant Date -
May 7, 2015
app pub date -
Sep 2, 2014
filing date -
Nov 6, 2013
priority date (Note) -
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Abstract
According to one embodiment, a first electrode is formed on a first face of a first semiconductor chip, and a second electrode and a protrusion are formed on a second face of a second semiconductor chip. The first semiconductor chip and the second semiconductor chip are spaced from one another by the protrusion in such a manner that the first face and the second face face each other. The first semiconductor chip and the second semiconductor chip are subject to reflow to be electrically connected to each other, and then the protrusion is cured at a temperature lower than a reflow temperature.
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