METHOD FOR PRODUCING M-PLANE NITRIDE-BASED LIGHT-EMITTING DIODE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Dec 24, 2014
filing date -
Jun 25, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Provided is a novel method for producing an m-plane nitride-based LED, the method making it possible to obtain an m-plane nitride-based LED reduced in forward voltage. The method comprising (i) a step of forming an active layer consisting of a nitride semiconductor over an n-type nitride semiconductor layer in which an angle between the thickness direction and the m-axis of a hexagonal crystal is 10 degrees or less, (ii) a step of forming an AlGaN layer doped with a p-type impurity over the active layer, (iii) a step of forming a contact layer consisting of InGaN is formed on the surface of the AlGaN layer, and (iv) a step of forming an electrode on the surface of the contact layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully