Nitride semiconductor device and method for manufacturing same
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United States of America Patent
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Mar 15, 2016
Grant Date -
May 7, 2015
app pub date -
Jan 9, 2015
filing date -
Mar 26, 2012
priority date (Note) -
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Abstract
According to one embodiment, a nitride semiconductor device includes a substrate; semiconductor stacked layers including a nitride semiconductor provided on the substrate, and having a buffer layer, a carrier running layer provided on the buffer layer, and a barrier layer provided on the carrier running layer; a source electrode and a drain electrode provided on the semiconductor stacked layers and in contact with the semiconductor stacked layers; and a gate electrode provided on the semiconductor stacked layers and provided between the source electrode and the drain electrode.
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