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Abstract

An organic-inorganic hybrid transistor comprises a flexible substrate, a gate electrode, an organic gate dielectric layer, an oxide semiconductor layer, a first passivation layer, a source electrode and a drain electrode. The gate electrode is disposed on the flexible substrate. The organic gate dielectric layer covers the gate electrode and a portion of the flexible substrate. The oxide semiconductor layer is disposed over the organic gate dielectric layer. The first passivation layer is interposed between and in contact with the oxide semiconductor layer and the organic gate dielectric layer. The source electrode and the drain electrode are respectively connected to different sides of the oxide semiconductor layer.

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First Claim