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Abstract

A field effect transistor is provided. The field effect transistor includes a semiconductor region formed on a substrate, wherein the semiconductor region comprises an undoped channel region, a source region including a first dopant type, and a drain region including a second dopant type, and wherein the channel region is formed of a group III-V compound semiconductor material. The field effect transistor further includes a high-K gate formed on the channel region, wherein the high-K gate is configured to generate electron tunneling between the source region and the drain region when a gate voltage is applied, and wherein a first contact surface between the source region and the channel region and a second contact surface between the drain region and the channel region are inclined.

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First Claim