Methods and structures for eliminating or reducing line end epi material growth on gate structures
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United States of America Patent
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Aug 11, 2015
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app pub date -
Nov 13, 2013
filing date -
Nov 13, 2013
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Abstract
One method disclosed herein includes, among other things, forming a line-end protection layer in an opening on an entirety of each opposing, spaced-apart first and second end face surfaces of first and second spaced-apart gate electrode structures, respectively, and forming a sidewall spacer adjacent opposing sidewall surfaces of each of the gate electrode structures but not adjacent the opposing first and second end face surfaces having the line-end protection layer positioned thereon.
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