Via-fuse with low dielectric constant

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United States of America Patent

PATENT NO 9105638
APP PUB NO 20150130018A1
SERIAL NO

14076333

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Abstract

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In an embodiment of the present invention, a semiconductor device comprises a non-fuse area that has a non-fuse via, a non-fuse line, and a non-fuse dielectric stack. The semiconductor device further comprises a fuse area that has a fuse via, a fuse line, and a fuse dielectric stack. The fuse dielectric stack comprises at least a first dielectric and a second dielectric material. The fuse via is at least partially embedded in the first dielectric material and the fuse line is embedded in the second dielectric material.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Junjing Cedar Grove, US 99 513
Bonilla, Griselda Fishkill, US 107 1075
Choi, Samuel S Fishkill, US 48 408
Filippi, Ronald G Wappingers Falls, US 99 1178
Li, Wai-Kin Hopewell Junction, US 150 2103
Lustig, Naftali E Croton on Hudson, US 59 1489
Simon, Andrew H Fishkill, US 104 1612

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