SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20150131382A1
SERIAL NO

14188927

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Abstract

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A semiconductor storage device including a memory cell array including a memory cell and a circuit element including first wirings and a selection element, the first wirings having a wiring width smaller than a resolution limit of an exposure apparatus. The first wirings extend in a first direction and are aligned in a second direction crossing with the first direction. A second wiring, being one of the first wirings, is cut by at least one cut region. The first wiring adjacent to the second wiring in the second direction extends continuously in the first direction in a portion adjacent to the cut region in the second direction.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1050023 ?1050023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HIMENO, Yoshiaki Yokkaichi, JP 21 191

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