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Abstract

Provided is a compound semiconductor solar cell (2) with improved conversion efficiency. The compound semiconductor solar cell includes a substrate (4), a back electrode (6) disposed on the substrate, a p-type compound semiconductor light absorber layer (8) disposed on the back electrode, an n-type compound semiconductor buffer layer (10) disposed on the p-type compound semiconductor light absorber layer, and a transparent electrode (12) disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorber layer (8) is formed of (Ag_xCu_1-x)_2aZn_b(Ge_ySn_1-y)_c(S_1-zSe_z)₄, wherein 0≦x≦1, 0≦y≦1, 0≦z≦10.5≦a≦1.5, 0.5≦b≦1.5, and 0.5≦c≦1.5. The n-type compound semiconductor buffer layer (10) contains at least one of tin and germanium. The n-type compound semiconductor buffer layer (10) has a lower tin and germanium concentration than the p-type compound semiconductor light absorber layer (8).

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