Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom
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United States of America Patent
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Mar 28, 2017
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N/A
app pub date -
Jan 29, 2015
filing date -
Jun 14, 2011
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Abstract
A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.
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