FORMING OF A HEAVILY-DOPED SILICON LAYER ON A MORE LIGHTLY-DOPED SILICON SUBSTRATE
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United States of America Patent
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Issued Date -
May 21, 2015
app pub date -
Nov 11, 2014
filing date -
Nov 15, 2013
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Abandoned
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Abstract
A method of forming a heavily-doped silicon layer on a more lightly-doped silicon substrate including the steps of depositing a heavily-doped amorphous silicon layer; depositing a silicon nitride layer; and heating the amorphous silicon layer to a temperature higher than or equal to the melting temperature of silicon.
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