SEMICONDUCTOR WAFER, MANUFACTURING METHOD OF SEMICONDUCTOR WAFER AND METHOD FOR MAUNFACTURING COMPOSITE WAFER
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United States of America Patent
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Jan 22, 2015
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Jul 24, 2012
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Abstract
A semiconductor wafer comprises, on a semiconductor crystal layer forming wafer, a first semiconductor crystal layer, a second semiconductor crystal layer, and a third semiconductor crystal layer in this order, wherein both the etching rates of the first semiconductor crystal layer and the third semiconductor crystal layer by a first etching agent are higher than the etching rate of the second semiconductor crystal layer by the first etching agent, and both the etching rates of the first semiconductor crystal layer and the third semiconductor crystal layer by a second etching agent are lower than the etching rate of the second semiconductor crystal layer by the second etching agent.
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