SEMICONDUCTOR WAFER, METHOD OF PRODUCING A SEMICONDUCTOR WAFER AND METHOD OF PRODUCING A COMPOSITE WAFER
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Dec 12, 2014
filing date -
Jun 15, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor wafer is provided. The semiconductor wafer comprises a sacrificial layer and a semiconductor crystal layer above a semiconductor crystal layer forming wafer, the semiconductor crystal layer forming wafer, the sacrificial layer and the semiconductor crystal layer being arranged in the order of the semiconductor crystal layer forming wafer, the sacrificial layer and the semiconductor crystal layer, wherein the semiconductor wafer comprises a diffusion inhibiting layer that inhibits diffusion of a first atom of one type selected from a plurality of types of atoms constituting the semiconductor crystal layer forming wafer or the sacrificial layer, at any cross-sectional position between (a) the interface of the semiconductor crystal layer forming wafer that faces the sacrificial layer and (b) a middle of the semiconductor crystal layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully