Precursors For GST Films In ALD/CVD Processes
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United States of America Patent
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Jan 23, 2015
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Jan 28, 2008
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Abstract
The present invention is a process of making a germanium-antimony-tellurium alloy (GST) or germanium-bismuth-tellurium (GBT) film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. The invention is also related to making antimony alloy with other elements using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony or silylbismuth precursor is used as a source of antimony or bismuth.
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