Method of forming controllably conductive oxide
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United States of America Patent
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Oct 4, 2016
Grant Date -
May 28, 2015
app pub date -
Feb 2, 2015
filing date -
Sep 6, 2007
priority date (Note) -
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Abstract
In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is then formed on the layer.
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