SINGLE CRYSTAL SILICON INGOT AND WAFER, AND APPARATUS AND METHOD FOR GROWING SAID INGOT
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United States of America Patent
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May 28, 2015
app pub date -
Apr 2, 2013
filing date -
May 23, 2012
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Abstract
The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region.
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