Reduction of Charging Induced Damage in Photolithography Wet Process

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20150155162A1
SERIAL NO

14095150

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An approach is developed to use an acidic rinse to reduce charge during the lithographic process, and thereby eliminate the crystalline damage and associated yield loss associated with the accumulated charge. The crystalline damage has been found to occur for certain thicknesses of dielectric layers, and such damage is irreparable. A sparge can be used to dissolve carbon dioxide in water to provide a weak acidic rinse.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
CYPRESS SEMICONDUCTOR CORPORATION198 CHAMPION COURT SAN JOSE CA 95134

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BIERWAG, Alexander J Austin, US 1 0
FOSTER, Christopher M Austin, US 4 76
HIGGINS,, SR Kelley Kyle Austin, US 1 0
KHOGLY, Moutasim Austin, US 1 0
SUTTON, Daniel E Austin, US 5 9
WILCOX, Daniel H Round Rock, US 2 1

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation