SIDEWALL HEIGHT NONUNIFORMITY REDUCTION FOR SIDEWALL IMAGE TRANSFER PROCESSES
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United States of America Patent
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Issued Date -
Jun 4, 2015
app pub date -
Dec 3, 2013
filing date -
Dec 3, 2013
priority date (Note) -
Abandoned
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Abstract
A method and integrated circuit structure. The method includes reducing sidewall height nonuniformity in sidewall image transfer processes by depositing an organic planarization layer over the integrated circuit structure after sidewall definition, mandrel removal, and etch of exposed portions of a first underlying layer in a sidewall image transfer process that is thick enough to cover one or more first sidewalls having a first height and one or more second sidewalls having a second height with the first height greater than the second height, removing a part of the organic planarization layer leaving a first depth of the one or more first sidewalls exposed, removing the exposed first depth of the one or more first sidewalls, and removing the remaining organic planarization layer.
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