Thermoelectric Structures and Devices Based on Topological Insulators
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United States of America Patent
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Issued Date -
Jun 4, 2015
app pub date -
Mar 12, 2014
filing date -
Dec 2, 2013
priority date (Note) -
Abandoned
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Abstract
Method and apparatus are provided for improving the thermoelectric figure of merit (zT) for thermoelectric structures and devices based on topological insulators. In one novel aspect, the zT of the TI is increased by optimizing geometric sizes of the TI. In one embodiment, the zT is increased by increasing the length of the TI to be greater than the inelastic mean free path length. In another embodiment, the zT is increased by decrease the width of a 2D TI to be about three times the localized localization width ξ of the boundary state of the TI, or to decrease the thickness of a 3D TI to be about three times of ξ. In one novel aspect of the current invention, methods are provided to increase zT of the TI by substantially maximizing a relative thermoelectric-transport contribution of the boundary state with respect to the bulk states.
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