METAL CHALCOGENIDE THIN FILM AND PREPARING METHOD THEREOF
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United States of America Patent
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Issued Date -
Jun 11, 2015
app pub date -
Dec 10, 2014
filing date -
Dec 10, 2013
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Abandoned
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Abstract
Provided herein is a metal chalcogenide thin film and a method for preparing the metal chalcogenide thin film, the method including forming a metal layer on a substrate; and forming a metal chalcogenide thin film by inserting the substrate into a chamber for low temperature vapor deposition, injecting a gas containing chalcogen atoms and an argon gas into the chamber, generating a plasma such that chalcogen atoms decomposed by the plasma chemically combine with metal atoms constituting the metal layer to form the metal chalcogenide thin film.
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