Method for Fabricating CMOS Compatible Contact Layers in Semiconductor Devices

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United States of America Patent

APP PUB NO 20150162212A1
SERIAL NO

14551398

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Abstract

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A method for fabricating Complementary Metal Oxide Semiconductor (CMOS) compatible contact layers in semiconductor devices is disclosed. In one embodiment, a nickel (Ni) layer is deposited on a p-type gallium nitride (GaN) layer of a GaN based structure. Further, the GaN based structure is thermally treated at a temperature range of 350° C. to 500° C. Furthermore, the Ni layer is removed using an etchant. Additionally, a CMOS compatible contact layer is deposited on the p-type GaN layer, upon removal of the Ni layer.

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Patent OwnerAddress
IMEC VZWKAPELDREEF 75 LEUVEN 3001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cavaco, Celso Leuven, BE 3 1
De, Jaeger Brice Leuven, BE 6 29
Motsnyi, Vasyl Leuven, BE 3 3
Van, Hove Marleen Blanden, BE 7 72

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