SEMICONDUCTOR LIGHT EMITTING DEVICE
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United States of America Patent
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Issued Date -
Jun 11, 2015
app pub date -
Jul 1, 2013
filing date -
Jun 29, 2012
priority date (Note) -
Abandoned
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Abstract
A semiconductor light emitting device capable of enhancing light emitting efficiency is disclosed. The semiconductor light emitting device includes an n-type semiconductor layer, a quantum well layer, a barrier layer and a p-type semiconductor layer. The quantum well layer is formed on the n-type semiconductor layer. The barrier layer is formed on the quantum well layer. The p-type semiconductor layer is formed on the barrier layer. The barrier layer includes at least one p-type delta doping layer.
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