Method for Synthesis of Uniform Bi-Layer and Few-Layer Hexagonal Boron Nitride Dielectric Films
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United States of America Patent
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Issued Date -
Jun 18, 2015
app pub date -
Dec 17, 2014
filing date -
Dec 17, 2013
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Abstract
A method for forming high quality hexagonal boron-nitride films with multiple layers that are substantially parallel to the substrate and with substantially uniform layer thickness. In one embodiment, a bi-layer of boron-nitride is formed on a substrate by reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N2 gas mixtures at elevated temperature. In another embodiment, few-layer boron nitride films are formed by alternatingly reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N2 gas mixtures at room temperature and annealing at elevated temperature until a desired number of layers of high quality hexagonal boron nitride layers are formed on the substrate.
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