CRYSTAL PRODUCING APPARATUS, SiC SINGLE CRYSTAL PRODUCING METHOD, AND SiC SINGLE CRYSTAL
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United States of America Patent
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app pub date -
Feb 24, 2015
filing date -
Aug 26, 2012
priority date (Note) -
Abandoned
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Abstract
Provided is a crystal producing apparatus capable of producing a single crystal having excellent quality. The crystal producing apparatus for growing a single crystal on a crystal growth surface of a seed crystal in a raw material solution by a liquid phase growth method, includes: a liquid tub which accommodates a raw material solution; a crystal holding element which holds a seed crystal; and a solution flowing element which allows the raw material solution in the liquid tub to flow. Among these, the crystal holding element is able to hold the seed crystal in the liquid tub and is movable in at least a partial region on an xy plane perpendicular to a z-axis that extends in a depth direction of the liquid tub.
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