Sputtering Target

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United States of America Patent

APP PUB NO 20150170890A1
SERIAL NO

14402024

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a sputtering target composed of a metal matrix phase containing Co and a phase containing 6 to 25 mol % of an oxide that is dispersed in the form of grains (hereinafter, referred to as “oxide phase”); and the sputtering target is characterized in that the integral width of the highest peak among single peaks of XRD is 0.7 or less. A non-magnetic material grain-dispersed sputtering target is provided, which does not undergo the formation of initial particles during sputtering to thereby shorten a burn-in time and which enables the generation of steady discharge during sputtering.

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Patent Owner(s)

Patent OwnerAddress
JX NIPPON MINING & METALS CORPORATION10-4 TORANOMON 2-CHOME MINATO-KU TOKYO 105-8417

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikeda, Yuki Ibaraki, JP 44 122

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