SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20150170915A1
SERIAL NO

14395444

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Abstract

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The present invention provides a method for manufacturing a semiconductor structure, which is characterized in comprising following steps: providing an SOI substrate for forming a semiconductor structure; the SOI substrate comprises a monocrystalline silicon top layer, a buried oxide layer and a support substrate; and forming an amorphous region outside the area for forming a channel region of the semiconductor structure in the monocrystalline silicon top layer. The method provided by the present invention can effectively improve reliability of a gate dielectric layer formed on the SOI substrate.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bi, Jinshun Beijing, CN 6 0
Han, Zhengsheng Beijing, CN 8 2
Luo, Jiajun Beijing, CN 10 2

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