SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jun 18, 2015
app pub date -
Sep 21, 2012
filing date -
Apr 20, 2012
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Abandoned
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Abstract
The present invention provides a method for manufacturing a semiconductor structure, which is characterized in comprising following steps: providing an SOI substrate for forming a semiconductor structure; the SOI substrate comprises a monocrystalline silicon top layer, a buried oxide layer and a support substrate; and forming an amorphous region outside the area for forming a channel region of the semiconductor structure in the monocrystalline silicon top layer. The method provided by the present invention can effectively improve reliability of a gate dielectric layer formed on the SOI substrate.
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