Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)

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United States of America Patent

PATENT NO 9236292
APP PUB NO 20150170961A1
SERIAL NO

14133262

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Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a metallization structure for an integrated circuit involves forming an exposed surface above a substrate, the exposed surface including regions of exposed dielectric material and regions of exposed metal. The method also involves forming, using a selective metal deposition process, a metal layer on the regions of exposed metal without forming the metal layer on the regions of exposed dielectric material.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Clendenning, Scott B Portland, US 82 826
Gstrein, Florian Portland, US 82 987
Roberts, Jeanette M Hillsboro, US 94 2404
Romero, Patricio E Portland, US 25 650

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