Method for forming self-aligned contacts/vias with high corner selectivity

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United States of America Patent

PATENT NO 9105700
APP PUB NO 20150170965A1
SERIAL NO

14105073

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Abstract

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A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hudson, Eric A Berkeley, US 106 3834
Indrakanti, Ananth Fremont, US 5 48
Wang, Peng Clifton Park, US 1121 5563

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