INTEGRATED CIRCUITS WITH DUMMY CONTACTS AND METHODS FOR PRODUCING SUCH INTEGRATED CIRCUITS

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United States of America Patent

APP PUB NO 20150171008A1
SERIAL NO

14109227

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Integrated circuits with dummy contacts and methods for fabricating such integrated circuits are provided. The method includes forming an interlayer dielectric overlying an electronic component and a substrate, wherein the interlayer dielectric has an interlayer dielectric top surface. An active contact is formed through the interlayer dielectric and forms an electrical connection with the electronic component. A dummy contact is formed within the interlayer dielectric where the dummy contact extends to a dummy contact termination point between the interlayer dielectric top surface and the substrate such that an insulator is positioned between the dummy contact termination point and the electronic component.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Tian-Lin Singapore, SG 2 187
Chen, Aaron Singapore, SG 27 446
Liang, Jianfang Singapore, SG 2 187
Luo, Laiqiang Singapore, SG 7 182
Tan, Juan Boon Singapore, SG 167 1373
Zhang, Fan Singapore, SG 973 7171

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