Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 9362422
APP PUB NO 20150171159A1
SERIAL NO

14459455

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Abstract

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Provided is a semiconductor device and a method for fabricating the same. The semiconductor device includes an interlayer insulating layer formed on a semiconductor substrate, a metal contact plug penetrating the interlayer insulating layer, a cylindrical lower electrode formed on the metal contact plug and including a first metal and a trench, a supporter formed in the trench and including a second metal that is different from the first metal, a dielectric layer formed on the lower electrode and the supporter and an upper electrode formed on the dielectric layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lim, Han-jin Seoul, KR 51 395

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