Growing buffer layers in bulk finFET structures
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United States of America Patent
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Oct 13, 2015
Grant Date -
Jun 18, 2015
app pub date -
Dec 18, 2013
filing date -
Dec 18, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor structure may be formed by forming a fin on a substrate, forming a gate over a portion of the fin, removing a portion of the fin not below the gate to expose a sidewall of the fin beneath the gate and a top surface of the substrate, forming a first protective layer on the top surface of the substrate but not on the sidewall of the fin, forming a second protective layer on the sidewall of the fin prevented from forming on the top surface of the substrate by the first protective layer, removing the first protective layer to expose the top surface of the substrate, forming a buffer layer on the top surface of the substrate; the buffer layer prevented from forming on the sidewall of the fin by the second protective layer, and forming a source-drain region on the buffer layer electrically connected to the fin.
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