Low Resistivity Nitrogen-Doped Zinc Telluride and Methods for Forming the Same
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United States of America Patent
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Jun 18, 2015
app pub date -
Dec 17, 2013
filing date -
Dec 17, 2013
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Abstract
Embodiments provided herein describe methods for forming nitrogen-doped zinc telluride, such as for use in photovoltaic devices. The zinc telluride layer is formed using physical vapor deposition (PVD) at a processing temperature of between about 100° C. and about 450° C. in a gaseous environment that includes between about 3% and about 10% by volume of nitrogen gas.
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