Quantum efficiency of multiple quantum wells

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United States of America Patent

PATENT NO 9583671
APP PUB NO 20150171265A1
SERIAL NO

14629487

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Abstract

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Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.

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Patent Owner(s)

  • INVENSAS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beroz, Masud Morrisville, US 103 3166
Mohammed, Ilyas Santa Clara, US 305 7578
Wang, Liang Milpitas, US 572 4816

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