IN-SITU BORON DOPED PDC ELEMENT
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United States of America Patent
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Feb 26, 2015
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Dec 15, 2010
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Abstract
A polycrystalline diamond compact formed in an in-situ boron-doped process. The in-situ boron-doped process includes consolidating a mixture of diamond crystals and boron-containing alloy via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and at a temperature greater than the melting temperature of the boron-containing alloy, typically less than about 1450° C.
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