CONTROLLED SPALLING OF GROUP III NITRIDES CONTAINING AN EMBEDDED SPALL RELEASING PLANE
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United States of America Patent
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Jun 16, 2015
Grant Date -
Jun 25, 2015
app pub date -
Dec 19, 2013
filing date -
Dec 19, 2013
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Abstract
A spall releasing plane is formed embedded within a Group III nitride material layer. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions that provide the Group III nitride material layer and embed the spall releasing plane. The spall releasing plane provides a weakened material plane region within the Group III nitride material layer which during a subsequently performed spalling process can be used to release one of the portions of Group III nitride material from the original Group III nitride material layer. In particular, during the spalling process crack initiation and propagation occurs within the spall releasing plane embedded within the original Group III nitride material layer.
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