Method for depositing extremely low resistivity tungsten

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United States of America Patent

PATENT NO 9589808
SERIAL NO

14135375

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Abstract

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Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bamnolker, Hanna Cupertino, US 29 1302
Guan, Yan Cupertino, US 9 398
Humayun, Raashina Fremont, US 82 6337
Wang, Deqi San Jose, US 26 1102

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