Thickened stress relief and power distribution layer
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United States of America Patent
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Nov 15, 2016
Grant Date -
Jun 25, 2015
app pub date -
Dec 20, 2013
filing date -
Dec 20, 2013
priority date (Note) -
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Abstract
An embodiment includes a semiconductor structure comprising: a frontend portion including a device layer; a backend portion including a bottom metal layer, a top metal layer, and intermediate metal layers between the bottom and top metal layers; wherein (a) the top metal layer includes a first thickness that is orthogonal to the horizontal plane in which the top metal layer lies, the bottom metal layer includes a second thickness; and the intermediate metal layers includes a third thickness; and (b) the first thickness is greater than or equal to a sum of the second and third thicknesses. Other embodiments are described herein.
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