Semiconductor device and method of forming build-up interconnect structures over a temporary substrate

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United States of America Patent

PATENT NO 9818734
SERIAL NO

14624136

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Abstract

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A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

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Patent Owner(s)

  • STATS CHIPPAC LTD.;STATS CHIPPAC PTE. LTE.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kang Singapore, SG 177 3931
Lin, Yaojian Singapore, SG 330 9767

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