Liner for phase change memory (PCM) array and associated techniques and configurations

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United States of America Patent

PATENT NO 9397143
APP PUB NO 20150179706A1
SERIAL NO

14137864

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Abstract

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Embodiments of the present disclosure describe a liner for a phase change memory (PCM) array and associated techniques and configurations. In an embodiment, a substrate, an array of phase change memory (PCM) elements disposed on the substrate, wherein individual PCM elements of the array of PCM elements comprise a chalcogenide material and a liner disposed on sidewall surfaces of the individual PCM elements, wherein the liner comprises aluminum (Al), silicon (Si) and oxygen (O). Other embodiments may be described and/or claimed.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bhat, Vishwanath Boise, US 78 1275
Rocklein, Noel Boise, US 32 628
Song, Zhe Boise, US 18 106
Tao, Qian Boise, US 100 812

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