GROUP III-V SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jun 25, 2015
app pub date -
Dec 19, 2014
filing date -
Dec 20, 2013
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Abandoned
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Abstract
Provided are group III-V semiconductor transistors and methods of manufacturing the same. The method includes forming a group III-V semiconductor channel layer on a substrate, forming a gate insulating layer covering the group III-V semiconductor channel layer, and forming a protection layer including sulfur between the group III-V semiconductor channel layer and the gate insulating layer by annealing the substrate under a sulfur atmosphere.
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