Conformal thin film deposition of electropositive metal alloy films
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United States of America Patent
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Sep 27, 2016
Grant Date -
Jun 25, 2015
app pub date -
Dec 24, 2013
filing date -
Dec 24, 2013
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Abstract
The present disclosure relates to a method of forming a semiconductor. The method includes heating a substrate in a reaction chamber, supplying to the reaction chamber a first constituent including a metal borohydride wherein the metal borohydride includes at least one of: an alkaline earth metal, a transition metal, or a combination thereof; supplying to the reaction chamber a main-group hydride constituent; and depositing a metal compound on the substrate, wherein the metal compound comprises a) at least one of an alkaline earth metal a transition metal or a combination thereof, b) boron and c) optionally the main group alloying element.
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