Methods of manufacturing nitride semiconductor devices
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United States of America Patent
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Oct 13, 2015
Grant Date -
Jul 2, 2015
app pub date -
Jun 20, 2014
filing date -
Dec 30, 2013
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Abstract
Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.
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